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| Not for New Designs VDSS ID25 27 A 25 A 27 A 25 A RDS(on) 0.30 0.35 0.30 0.35 HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK IXFK IXFN IXFN 27N80 25N80 27N80 25N80 800 800 800 800 V V V V TO-264 AA (IXFK) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight Symbol Test Conditions 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 300 0.9/6 10 TC= 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C, Chip capability TC = 25C, pulse width limited by TJM TC = 25C Maximum Ratings IXFK IXFN 800 800 20 30 27N80 27 25N80 25 27N80 108 25N80 100 27N80 14 25N80 13 30 5 500 800 800 20 30 27 25 108 100 14 13 30 5 520 150 -55 ... +150 2500 3000 V V V V A A A A A A mJ V/ns W C C C C V~ V~ Features * * * * * * G D S (TAB) miniBLOC, SOT-227 B (IXFN) E153432 D G S G S S S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source -55 ... +150 Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 800 0.096 2 -0.214 200 TJ = 25C TJ = 125C 25N80 27N80 500 2 0.35 0.30 4.5 V %/K V %/K nA A mA * * International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDSS temperature coefficient VDS = VGS, ID = 8 mA VGS(th) temperature coefficient VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 % Applications * * * * * DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Advantages * * * Easy to mount Space savings High power density (c) 2002 IXYS All rights reserved 95561D(6/02) IXFK 25N80 IXFN 25N80 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 16 28 S pF pF pF ns ns ns ns nC nC nC K/W K/W 0.24 0.05 K/W K/W Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T IXFK 27N80 IXFN 27N80 TO-264 AA Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK RthJC RthCK VDS = 10 V; ID = 0.5 * ID25, pulse test 7930 8400 9740 VGS = 0 V, VDS = 25 V, f = 1 MHz 630 146 712 790 192 240 30 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 80 75 40 320 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 38 120 TO-264 AA TO-264 AA miniBLOC, SOT-227 B miniBLOC, SOT-227 B 0.15 350 400 46 56 130 142 0.25 RG = 1 (External), Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 27N80 25N80 27N80 25N80 27 25 108 100 1.5 250 400 2 17 A A A A V ns ns C A miniBLOC, SOT-227 B IF = 100 A, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V T J =25C TJ =125C T J =25C M4 screws (4x) supplied Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFK 25N80 IXFN 25N80 40 TJ = 25 C O IXFK 27N80 IXFN 27N80 40 VGS = 9V 8V 7V 6V TJ = 125OC VGS = 9V 8V 7V 6V 30 30 ID - Amperes ID - Amperes 5V 5V 20 20 10 4V 10 4V 0 0 0 2 4 6 8 10 0 4 8 12 16 20 VDS - Volts VDS - Volts Figure 1. Output Characteristics at 25OC 2.6 2.4 VGS = 10V Figure 2. Output Characteristics at 125OC 2.6 RDS(ON) - Normalized RDS(ON) - Normalized 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 10 TJ = 125OC 2.4 2.2 2.0 1.8 1.6 1.4 1.2 VGS = 10V ID = 27A TJ = 25OC ID = 13.5A 20 30 40 50 1.0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID 30 25 IXF_25N80 IXFN27N80 Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ 30 25 ID - Amperes IXFK27N80 15 10 5 0 -50 ID - Amperes 20 20 15 10 5 TJ = 125oC TJ = 25oC -25 0 25 50 75 100 125 150 0 2 3 4 5 6 7 TC - Degrees C VGS - Volts Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves (c) 2002 IXYS All rights reserved IXFK 25N80 IXFN 25N80 12 10 VDS = 400V Vds=300V ID=30A = 27A = 1mA IG=10mA IXFK 27N80 IXFN 27N80 10000 Ciss VGS - Volts 8 6 4 2 0 Capacitance - pF f = 1MHz Coss 1000 Crss 0 100 200 300 400 500 100 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Figure 7. Gate Charge 100 Figure 8. Capacitance Curves 80 ID - Amperes 60 TJ = 125OC 40 20 TJ = 25OC 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Figure 9. Forward Voltage Drop of the Intrinsic Diode VSD - Volts 1 D=0.5 R(th)JC - K/W 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single pulse D = Duty Cycle 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds Figure 10. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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